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Overview


Samsung Computing DRAM

The right memory solution can be one of your most important competitive advantages. Samsung leads the industry with cutting-edge DRAM technology, including DDR2, DDR3-and soon, DDR4-to heighten the success of your designs. Leverage Samsung's fastest and highest performance DDR3 memory today with a dual-channel, 128-bit memory module to enable a throughput of more than 25.6GB's.

Meet intensifying power-efficiency demands

Our latest-generation Computing DRAM provides an outstanding combination of speed and efficiency. Dedicated on-board power-management features help reduce power consumption during idle memory cycles.

Energy efficiency can translate into big cost savings for server and desktop environments, long battery life for notebook users, and small carbon footprints. Samsung Computing DRAM solutions boost competitiveness with features enabling you to:

- Capitalize on our ultralow-power memory technology with 30-nm class, 1.35V, 2Gb DDR3.
- Achieve memory power savings of up to 67 percent using Samsung's latest 20-nm class DDR3 solutions, compared to existing 50-nm class DDR3.
- Operate at voltages as low as 1.2V while enabling nearly twice the bandwidth of DDR3 with upcoming DDR4 memory.

Bring advanced product solutions to life

Opportunities for DRAM memory are vast, and cover almost every device capable of being interconnected and networked. Samsung Computing DRAM delivers a wide range of design advantages, including:

- Clock rates exceeding 1GHz, allowing data rates as high as 1,866Mb's to support today's high-end and high-speed processors.
- Very low operating voltages, to help significantly reduce the power consumption and extend the usable duration of battery-powered devices.
- Increasingly dense fabrication (such as the latest 20-nm DDR3), minimizing the number of chips going into the end product and reclaiming board space that previous-generation chips would otherwise occupy.
- Built-in mechanisms such as DQ shielding, self-calibration, and fly-by topology for enhanced signal control.

Samsung's expertise in semiconductor memory and experience in delivering next-generation memory technologies advances the design of devices and applications such as ultrathin laptops with extended battery life.
Cloud-optimized servers also benefit greatly from Samsung Computing DRAM.




Specification

Technical Description: Samsung 4GB DDR3 SO-DIMM memory module 1 x 4 GB 204-pin SO-DIMM
Features
Module configuration:
512M x 8
Memory voltage:The voltage (V) of the memory in the device.
1.35 V
Memory ranking:
1
Buffered memory type:
Unregistered (unbuffered)
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
1600 MHz
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
11
ECC:ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
No
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
204-pin SO-DIMM
Component for:What this product is used as a part of (component for).
Laptop
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR3
Memory layout (modules x size):
1 x 4 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
4 GB

Operational conditions
Operating temperature (T-T):The minimum and maximum temperatures at which the product can be safely operated.
0 - 85 °C

Product details

M471B5173DB0-YK0 Samsung

Samsung 4GB DDR3 SO-DIMM memory module 1 x 4 GB 204-pin SO-DIMM

£31.00 and

SKU: M471B5173DB0-YK0

Samsung 4GB DDR3 SO-DIMM memory module 1 x 4 GB 204-pin SO-DIMM

Quick Code: Q765407 MPN: M471B5173DB0-YK0
£25.83ex VAT

Out of Stock