Overview



- Stable Operation
- High Quality
- Easy to Use




Specification


Technical Description: Samsung 8GB PC3-12800 memory module 1 x 8 GB DDR3 204-pin SO-DIMM

Features
Memory voltage:The voltage (V) of the memory in the device.
1.35 V
Buffered memory type:
Unregistered (unbuffered)
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
1600 MHz
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
11
ECC:ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
No
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
204-pin SO-DIMM
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR3
Memory layout (modules x size):
1 x 8 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
8 GB

Weight & dimensions
Height:The measurement of the product from head to foot or from base to top.
30 mm


Product details


M471B1G73QH0-YK0 Samsung 6023927791176

Samsung 8GB PC3-12800 memory module 1 x 8 GB DDR3 204-pin SO-DIMM

£106.99 and

SKUM471B1G73QH0-YK0

Samsung 8GB PC3-12800 memory module 1 x 8 GB DDR3 204-pin SO-DIMM

Quick Code: Q765355 MPN: M471B1G73QH0-YK0
£89.16ex VAT

Out of Stock