Main product

Overview


Proven DRAM module solution in the global market

Samsung’s memory modules are designed for a wide range of applications to deliver the best performance with low power requirements.




Reasons to buy

  • Application : Server
  • Error correction available by added 8 bit parity signals
  • Include a register for enhancing clock, command and control signals
  • Supports x4 / x8 Organization / up to 2 ranks per DIMM and 3DPC configuration

Specification

Technical Description: Samsung M393A8G40AB2-CWE Memory RAM - 64GB
Features
Memory voltage:The voltage (V) of the memory in the device.
1.2 V
Memory ranking:
2
Buffered memory type:
Registered (buffered)
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
3200 MHz
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
24
ECC:ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
Yes
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
288-pin DIMM
Component for:What this product is used as a part of (component for).
PC/Server
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR4
Memory layout (modules x size):
1 x 64 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
64 GB

General
Type:Characteristics of the device.
Memory RAM

Logistics data
Harmonized System (HS) code:
84733020

Product details

M393A8G40AB2-CWE Samsung 8592978250096

Samsung M393A8G40AB2-CWE Memory RAM - 64GB

£328.00 and

SKU: M393A8G40AB2-CWE

Samsung M393A8G40AB2-CWE Memory RAM - 64GB

Quick Code: Q356373 MPN: M393A8G40AB2-CWE
£273.33ex VAT

Out of Stock