Overview



DRAM is a type of RAM (random access memory) used as the main memory in several computing devices, such as desktop and notebook computers, servers, and high-end workstations. It is the most widely used semiconductor memory used in current generation computers, and offers several significant advantages, such as structural simplicity, very high packing densities (number of bytes that can be stored per unit of chip area), low power consumption, and sufficiently high data read/write speeds. Several types of DRAM are presently available for deployment on various computing platforms, such as home/personal computers, portable computers, and network servers. This type of memory has undergone several innovative technological developments and offers very high price/performance ratios.

Two types of DRAM are widely used for deployment in current generation servers: registered memory, and fully-buffered (FB) memory. Both these memory types are commercially available as DIMMs (dual inline memory modules). Registered DIMMs (or RDIMMs) are designed with an additional hardware register between the DRAM module and the system’s memory controller. RDIMMs present several advantages for the system, such as a lower electrical load on the memory controller and sustained stability even with an increase in the number of installed memory modules. Thus, RDIMMs are often the default choice for deployment in server-class computing systems. Fully-buffered DIMMs (or FB-DIMMs) are intended to be used in systems requiring higher memory densities with limited board space. As opposed to the parallel data transfer technique used in normal DRAM, FB-DIMMs transfer data in a serial format, using an additional buffer, known as advanced memory buffer (AMB) between the memory controller and the FB-DIMM modules. The AMB acts as an intermediary and handles all data reads/writes for the memory modules, taking care of issues such as signal degradation and error correction and reducing any overhead on the memory controller. Thus, FB-DIMMs prove to be a reliable alternative for deployment in server-grade machines.




Specification


Technical Description: Samsung M391A2K43BB1-CPBQ memory module 16 GB 1 x 16 GB DDR4 288-pin DIMM ECC

Features
Module configuration:
2048M x 72
Memory voltage:The voltage (V) of the memory in the device.
1.2 V
Memory ranking:
2
Buffered memory type:
Unregistered (unbuffered)
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
2133 MHz
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
15
ECC:ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
Yes
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
288-pin DIMM
Component for:What this product is used as a part of (component for).
PC/Server
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR4
Memory layout (modules x size):
1 x 16 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
16 GB

Operational conditions
Operating temperature (T-T):The minimum and maximum temperatures at which the product can be safely operated.
0 - 85 °C

Weight & dimensions
Height:The measurement of the product from head to foot or from base to top.
31.2 mm


Product details


M391A2K43BB1-CPBQ Samsung

Samsung M391A2K43BB1-CPBQ memory module 16 GB 1 x 16 GB DDR4 288-pin DIMM ECC

£166.99 and

SKUM391A2K43BB1-CPBQ

Samsung M391A2K43BB1-CPBQ memory module 16 GB 1 x 16 GB DDR4 288-pin DIMM ECC

Quick Code: Q2787892 MPN: M391A2K43BB1-CPBQ
£139.16ex VAT

Out of Stock